Comparative study on the formation of the three types of ordered structures (TP-A,CuPt-A, and CuPt-B) on group III sublattice in III-III-V type alloys are made for four kinds of alloys of AlInAs, GaInAs, AlInP, and GaInP grown by gas source molecular beam epitaxy. The bonding energy difference between the constituent binaries of a IIIA - IIIB-V type alloy is demonstrated to be an important factor for the ordered structure formation. The implications of the result for the formation mechanism is discussed.